STATE RESEARCH CENTER OF RUSSIAN FEDERATION KARPOV INSTITUTE OF PHYSICAL CHEMISTRY

LABORATORY OF PHYSICS, CHEMISTRY AND DIAGNOSTICS OF FILMS

Preparation, characterization and studies of following materials including thin films:Semiconducting oxides TiO2-x, SiO2-x, SrTiO3-x, BaTiO3-x.Ferroelectric complex oxides BaTiO3, PbTiO3, Pb(Ti,Zr)O3, Pb5Ge3O11, (Ba,Sr)TiO3, Al2O3.Superconducting complex oxides YBa2Cu3O7-x,Bi2Sr2CaCu2O8+x.
Development of new approaches in characterization of thin layers (secondary electron emissiometry, X-ray microprobe analysis, scanning electron microscopy, Auger electron spectromertry).
Surface segregation of chemical composition stimulated by the temperature, irradiation, pressure,atmosphere etc.

Yu.Ya.Tomashpolsky. Film ferroelectrics( in Russian), Moscow, Radio i svyaz Publishers, 1984
Yu.Ya.Tomashpolsky, V.I.Kukuev, E.P.Domashevskaya et al. Ferroelectrics, 1992, vol.130,pp.175-180
Yu.Ya.Tomashpolsky.Ferroelectrics, 1995, vol.167,pp.275-278
Yu.Ya.Tomashpolsky, I.Ya.Kolotyrkin, E.N.Lubnin, J.Microsc.Spectrosc.Electron.,1985,v.10, pp.521-537
Yu.Ya.Tomashpolsky, N.V.Sadovskaya, O.G.Gorshkov Industrial Laboratory.Diagnostica of Materials, 1999, N11, 23-27.

S.A.Menshikh, L.A.Geraskina, S.G.Prutchenko, L.F.Rybakova, Yu.Ya.Tomashpolsky. Inoranic materials, 1999, v.35, N5,pp.517-520
Yu.Ya.Tomashpolsky,L.F.Rybakova, O.V.Fedoseeva, I.A.Noskova, S.A.Menshikh. Inorgnic materials, 2001, v.37, N 1,pp.65-70
Yu.Ya.Tomashpolsky, S.A.Menshikh, L.A.Geraskina,S.G.Prutchenko,,L.F.Rybakova and P.A.Artamonov. Integrated Ferroelecrics,2000,v.29,pp.179-188
Yu.Ya.Tomashpolsky, P.A.Sheglov,S.A.Menshikh, S.G.Prutchenko and L.F.Rybakovsa. Integrated Ferroelecrics, 2000, v.29,pp.165-178
P.A.Sheglov,S.A.Menshikh, L.F.Rybakova and YU.Ya.Tomashpolsky.
Inorganic materials, 2000, N4,pp.380-384
P.A.Sheglov, S.A.Menshikh, S.G.Prutchenko, L.F.Rybakova and Yu.Ya.Tomashpolsky. Inorganic materials, 2000, v.36, N1, pp.67-71.

Elemental composition (X-ray microanalysis)
Phase composition ( X-ray diffractometry)
Microstructure(transmission and scanning electron microscopy in 20-800 K temperature range)
Film thickness (by interferometry and by electron microscopy)
Microhardness.
Electrophysical properties (ñapacitance and conductivity versus temperature, histeresis loops etc.)

identification of phases in heterogeneous semiconductors, ferroelectrics, superconductors with space localization of some mm.
measurements of band gap width, and donor (acceptor) level depth in semiconductors.
differentiation of donor or acceptor levels in band gap in semiconductors.
high sensitive estimation of oxygen deficiency in oxide semiconductors and superconductors (differential sensitivity is up to 0,001-0,00001 mol).
determination of phase transitions in ferroelectrics and superconductors.
measurements of parameters of secondary electron-substance interaction: escape depth, free path, etc.
study of oxydation kinetics with space localization of some mm in metals and alloys.
determination of the reduction degree in oxides with locali- zation of some mm. etc.

Yu.Ya.Tomashpolsky, M.A.Sevostianov, N.V. Sadovskaya, N.V.Kolganova. J.Microsc.Spectrosc.Electron, 1989, vol.14,pp.213-228
Yu.Ya.Tomashpolsky.Ferroelectrics, 1995, vol.163 ,P.I,pp.115-122
Yu.Ya.Tomashpolsky.Ibid, P.II, pp.123-127
Yu.Ya.Tomashpolsky,N.V.Sadovskaya. Ibid, P.III, pp.129-134
C.Diaz-Guerra, J.Piqueras, Yu.Ya.Tomashpolsky, N.V.Sadovskaya. Phys. stat.sol.,1996,vol.155,pp.525-539
Yu.Ya.Tomashpolsky. Analytical Secondary Electron Emissiometry. Microscopy and Analysis, 2001, i.71,pp.17-23
Yu,Ya.Tomashpolsky. Analytical Secondary Electron Emissiometry in Scanning Electron Microscope. Surface (Russian),2001, N6, pp.16-26

Measurements of Partner's specimens by our standard methods.
Measurements of Partner's specimens by our new secondary electron emission techniques (band gap width, electron level depth in band gap due to impurities, nonstoichiometry, as well as some electrophysical properties of separate inclusions etc.).
Discussion of these results. If this information is valuable we could discuss the possibilities to pass our methods to Partner.
Measurements of our film specimens (oxide semiconductors, ferroelectrics, superconductors) by Partner’s techniques and discussion of the results.
Preparation of specimens by both our's and Partner's methods.